Development of High Frequency Device Using Glass or Fused Silica with 3D Integration

Abstract

Glass and fused silica are promising material used as a substrate for RF components because of good electrical properties such as low permittivity and low dielectric loss tangent. What's more, glass and fused silica have higher bulk resistance because of insulation material, and superior stabilities against environmental changes as packaging level. This study explores, firstly a methodology and measurement results of high frequency characteristic of glass and fused silica up to 110 GHz, secondly, microfabrication technologies for glass and fused silica and those demonstration work especially about through via formation and metallization in prospect of 3D integrated RF packaging. Lastly, future development subjects related to RF components using glass or fused silica are discussed.