Angular dependences of SiO2 etch rates at different bias voltages in CF4, C2F6, and C4F8 plasmas

Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism

M. Schaepkens, T. E. F. M. Standaert, N. R. Rueger et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1999 · 312 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide

T. E. F. M. Standaert, Christer Hedlund, Eric Joseph et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2003 · 281 citations

Natural Sciences, Materials Engineering, Materials Science +17

Role of steady state fluorocarbon films in the etching of silicon dioxide using CHF3 in an inductively coupled plasma reactor

N. R. Rueger, JJ Beulens, M. Schaepkens et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1997 · 253 citations

Natural Sciences, Materials Engineering, Materials Science +15

Investigation of plasma etching mechanisms using beams of reactive gas ions

T. M. Mayer, R. A. Barker, L. J. Whitman · Journal of Vacuum Science and Technology · 1981 · 123 citations

Natural Sciences, Materials Science, Physics +15

Selective SiO2-to-Si3N4 etching in inductively coupled fluorocarbon plasmas: Angular dependence of SiO2 and Si3N4 etching rates

M. Schaepkens, G. S. Oehrlein, Christer Hedlund et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1998 · 68 citations

Engineering, Materials Engineering, Materials Science +17