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Determination of the dislocation densities in GaN on c-oriented sapphire

A. Pelzmann, Markus Mayer, C. Kirchner, D. Sowada, T. Rotter, Markus Kamp, K.J. Ebeling, Silke Christiansen, M. Albrecht, H. P. Strunk,

MRS Internet Journal of Nitride Semiconductor Research · 1996 · 17 citations · 4 references

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4

Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films

B. Heying, Xuemei Wu, S. Keller et al. · Applied Physics Letters · 1996 · 829 citations

, , +17

The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction

John E. Ayers · Journal of Crystal Growth · 1994 · 475 citations

, , +16

High-brightness InGaN/AlGaN double-heterostructure blue-green-light-emitting diodes

Shuji Nakamura, Takashi Mukai, Masayuki Senoh · Journal of Applied Physics · 1994 · 429 citations

, , +17

NH<sub>3</sub> as Nitrogen Source in MBE growth of GaN

M. Kamp, Markus Mayer, A. Pelzmann et al. · MRS Proceedings · 1995 · 19 citations

, , +10