A. Pelzmann

Luminescence Related to Stacking Faults in Heterepitaxially Grown Wurtzite GaN

M. Albrecht, Silke Christiansen, G. Salviati et al. · MRS Proceedings · 1997 · 47 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +5

High Quality Homoepitaxial GaN Grown by Molecular Beam Epitaxy with NH₃ on Surface Cracking

Markus Mayer Markus Mayer, A. Pelzmann, Markus Kamp Markus Kamp et al. · Japanese Journal of Applied Physics · 1997 · 46 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +18

Dry etching of GaN substrates for high-quality homoepitaxy

M. Schauler, Franz Eberhard, C. Kirchner et al. · Applied Physics Letters · 1999 · 43 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Optical activation and diffusivity of ion-implanted Zn acceptors in GaN under high-pressure, high-temperature annealing

T. Suski, J. Jun, M. Leszczyński et al. · Journal of Applied Physics · 1998 · 36 citations

Wide-bandgap Semiconductor, Optical Materials, High-temperature Annealing +16

On Surface Cracking of Ammonia for MBE Growth of GaN

M. Kamp, Markus Mayer, A. Pelzmann et al. · MRS Proceedings · 1996 · 30 citations

Materials Science, Materials Engineering, Chemical Engineering +8