Growth by MOCVD of In(Ga)AlN alloys, and a study of gallium contamination in these layers under nitrogen and hydrogen carrier gas

Current status of AlInN layers lattice-matched to GaN for photonics and electronics

R. Butté, E. Feltin, M. Gonschorek et al. · Journal of Physics D Applied Physics · 2007 · 328 citations · Full text

Engineering, Materials Science, Physics +17

Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions

Jeomoh Kim, Zachary Lochner, Mi‐Hee Ji et al. · Journal of Crystal Growth · 2013 · 50 citations

Natural Sciences, Materials Engineering, Materials Science +13

Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating

Suk Soon Choi, Hee Jin Kim, Zachary Lochner et al. · Journal of Crystal Growth · 2013 · 46 citations

Natural Sciences, Materials Engineering, Materials Science +17

Unintentional Ga incorporation in metalorganic vapor phase epitaxy of In-containing III-nitride semiconductors

Masanobu Hiroki, Yasuhiro Oda, Noriyuki Watanabe et al. · Journal of Crystal Growth · 2013 · 38 citations

Engineering, Materials Engineering, Materials Science +13

Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)

J.J. Zhu, Yujie Fan, Gui-Ping Lu et al. · Journal of Crystal Growth · 2012 · 31 citations

Engineering, Materials Engineering, Materials Science +15