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Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)

Materials EngineeringGan TemplateMaterials ScienceEngineeringSurface ScienceApplied PhysicsAluminum Gallium NitrideUnexpected Ga AtomsGallium OxideGan Power DeviceCategoryiii-v SemiconductorAlinn Epilayers