Zachary Lochner - Concepedia

Author

Zachary Lochner

Georgia Institute of Technology

Also Known As

Lochner, Z., Z. LOCHNER, Z. Lochner, Zachary Lochner, Zachary M. Lochner

Publications

1.2K

Citations

H-Index

Concepts

All Affiliations

Georgia Institute of Technology University of Houston Arizona State University Laboratoire Matériaux Optiques, Photonique et Systèmes Université de Versailles Saint-Quentin-en-Yvelines

About

Zachary Lochner is an author at Georgia Institute of Technology specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	19	826
2	Applied Physics	15	19	826
3	Electrical Engineering	10	12	525
4	Materials Science	6	6	231
5	Materials Engineering	2	2	96

Zachary Lochner

Publications

1.1K

Citations

H-Index

Page 1

	Year	Citations
Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells Jae‐Hyun Ryou, P. Douglas Yoder, Jianping Liu, IEEE Journal of Selected Topics in Quantum Electronics Visible LedsQuantum PhotonicsEngineeringQuantum EngineeringSemiconductors	2009	261
Ordered Nanowire Array Blue/Near‐UV Light Emitting Diodes Sheng Xu, Chen Xu, Ying Liu, Advanced Materials	2010	218
Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate Zachary Lochner, Tsung‐Ting Kao, Yuh‐Shiuan Liu, Applied Physics Letters Aluminium NitrideEngineeringLaser MaterialHigh-power LasersSemiconductor Lasers	2013	86
Bandgap bowing in BGaN thin films A. Ougazzaden, S. Gautier, T. Moudakir, Applied Physics Letters SemiconductorsMaterials ScienceAluminium NitrideOptical MaterialsEngineering	2008	56
Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications M. Abid, T. Moudakir, G. Orsal, Applied Physics Letters	2012	52
Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions Jeomoh Kim, Zachary Lochner, Mi‐Hee Ji, Journal of Crystal Growth Materials EngineeringInaln LayersMaterials ScienceEngineeringCrystal Growth Technology	2013	50
Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating Suk Soon Choi, Hee Jin Kim, Zachary Lochner, Journal of Crystal Growth Materials ScienceMaterials EngineeringAluminium NitrideEpitaxial GrowthEngineering	2013	46
Effects of a step-graded Al<i>x</i>Ga1−<i>x</i>N electron blocking layer in InGaN-based laser diodes Yun Zhang, Tsung‐Ting Kao, Jianping Liu, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringLaser ApplicationsLaser MaterialOptoelectronic Devices	2011	42
Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors Tsung‐Ting Kao, Yuh‐Shiuan Liu, Md. Mahbub Satter, Applied Physics Letters Aluminium NitrideShort Wavelength OpticOptical MaterialsEngineeringLaser Science	2013	38
Design and Analysis of 250-nm AlInN Laser Diodes on AlN Substrates Using Tapered Electron Blocking Layers Md. Mahbub Satter, Hee‐Jin Kim, Zachary Lochner, IEEE Journal of Quantum Electronics Aluminium NitrideElectrical EngineeringEngineeringPhysicsNanoelectronics	2012	37

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