Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions

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C.B. Alcock, V. P. Itkin, M. K. Horrigan · Canadian Metallurgical Quarterly · 1984 · 813 citations

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A reaction-transport model for AlGaN MOVPE growth

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A study of parasitic reactions between NH3 and TMGa or TMAI

C. H. Chen, H. Liu, D. A. Steigerwald et al. · Journal of Electronic Materials · 1996 · 158 citations

Life Sciences, Molecular Biology, Parasitology +1