Explanation and quantitative model for the matching behaviour of poly-silicon resistors

R. Thewes, Ralf Brederlow, C. Dahl, U. Kollmer, C. Linnenbank, B. Holzapfl, Jürgen Becker, J. Kissing, S. Kessel, W. Weber

2002 · 21 citations · 3 references

Concepts

Abstract

We investigate the matching behaviour of poly-silicon resistors. Experimental results from an analog CMOS process with three poly-silicon options are discussed and compared with a quantitative model which is developed using fit parameter-free analytical calculations and Monte-Carlo simulations. It is found that mismatch is directly proportional to the grain size. A relation is derived that allows us to optimize devices for low mismatch circuit applications.

References

3