Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits

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Adrian M. Ionescu, Heike Riel · Nature · 2011 · 2.9K citations · Full text

Engineering, Electrical Engineering, Materials Science +14

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Uygar E. Avci, Daniel H. Morris, Ian A. Young · IEEE Journal of the Electron Devices Society · 2015 · 521 citations · Full text

Engineering, Electrical Engineering, Physics +14

Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing

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Engineering, Electrical Engineering, Materials Engineering +17

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Engineering, Electrical Engineering, Microelectronics +16

Analysis and comparison on full adder block in submicron technology

Massimo Alioto, G. Palumbo · IEEE Transactions on Very Large Scale Integration (VLSI) Systems · 2002 · 210 citations

Engineering, Computer Engineering, Electrical Engineering +17