A manufacturable high performance 0.1- mu m pseudomorphic AlGaAs/InGaAs HEMT process for W-band MMICs

Abstract

A reproducible and high-performance 0.1- mu m pseudomorphic InGaAs HEMT (high-electron-mobility transistor) MMIC (monolithic microwave integrated circuit) process for W-band MMIC fabrication has been developed. The process has been transferred to production and will offer low-cost/high-volume production of W-band MMICs for both military and commercial applications. In developing this process, emphasis was placed on achieving high producibility without compromising the device performance necessary for successful implementation of W-band circuits. The authors present details of the process, device performance, examples from over 25 W-band MMICs fabricated to date, and the resulting process transfer to a flexible manufacturing line.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>