Concepedia

Improving InGaN heterojunction solar cells efficiency using a semibulk absorber

Muhammad Arif, Walid El‐Huni, Jérémy Streque, Suresh Sundaram, Sofiane Belahsene, Youssef El Gmili, Matthew B. Jordan, Xiaojian Li, G. Patriarche, A. Slaoui,

Solar Energy Materials and Solar Cells · 2016 · 28 citations · 23 references

DOI

Concepts

References

23

Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system

Junqiao Wu, W. Walukiewicz, K. M. Yu et al. · Journal of Applied Physics · 2003 · 608 citations

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Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells

X. H. Wu, C. R. Elsass, A. Abare et al. · Applied Physics Letters · 1998 · 458 citations

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InGaN: An overview of the growth kinetics, physical properties and emission mechanisms

F.K. Yam, Z. Hassan · Superlattices and Microstructures · 2007 · 239 citations

, , +10

New Approach in Equilibrium Theory for Strained Layer Relaxation

A. Fischer, Hans‐Carsten Kühne, Hans Richter · Physical Review Letters · 1994 · 226 citations

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The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes

Di Zhu, Jiuru Xu, Ahmed N. Noemaun et al. · Applied Physics Letters · 2009 · 223 citations · Full text

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