Applied Physics Letters · 2009 · 223 citations · 13 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsDopingLight-emitting DiodesSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsWide Band Gap SemiconductorsBarriersGallium Nitride (Gan) MaterialsGallium Nitride Light-emitting DiodesJunction Ideality FactorLight-emitting DevicesQuantum Well HeterostructuresQuantum Well Light-emitting DiodesQuantum Well Structures
We report on a significant decrease in the diode-ideality factor of GaInN/GaN multiple quantum well light-emitting diodes (LEDs), from 5.5 to 2.4, as Si-doping is applied to an increasing number of quantum barriers (QBs). The minimum ideality factor of 2.4 is obtained when all QBs are doped. It is shown that polarization-induced triangular band profiles of the undoped QBs are the major cause of the high ideality factors in GaInN/GaN LEDs. Numerical simulations show excellent agreement with the measured ideality factor value and its dependence on QB doping.
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