Jiuru Xu

Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

Martin F. Schubert, Jiuru Xu, Jong Kyu Kim et al. · Applied Physics Letters · 2008 · 473 citations · Full text

Engineering, Optoelectronic Devices, Semiconductors +17

The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes

Di Zhu, Jiuru Xu, Ahmed N. Noemaun et al. · Applied Physics Letters · 2009 · 219 citations · Full text

Qb Doping, Photonics, Electrical Engineering +15

Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes

Jiuru Xu, Martin F. Schubert, Ahmed N. Noemaun et al. · Applied Physics Letters · 2009 · 157 citations · Full text

White Oled, Photonics, Electrical Engineering +15

On resonant optical excitation and carrier escape in GaInN/GaN quantum wells

Martin F. Schubert, Jiuru Xu, Qi Dai et al. · Applied Physics Letters · 2009 · 66 citations · Full text

Engineering, Carrier Escape, Gainn Layers +16

Electroluminescence induced by photoluminescence excitation in GaInN/GaN light-emitting diodes

M. Schubert, Qi Dai, Jiuru Xu et al. · Applied Physics Letters · 2009 · 30 citations · Full text

Photonics, Electrical Engineering, Solid-state Lighting +13