Ahmed N. Noemaun

The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes

Di Zhu, Jiuru Xu, Ahmed N. Noemaun et al. · Applied Physics Letters · 2009 · 223 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes

Jiuru Xu, Martin F. Schubert, Ahmed N. Noemaun et al. · Applied Physics Letters · 2009 · 158 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Elimination of total internal reflection in GaInN light-emitting diodes by graded-refractive-index micropillars

Jong Kyu Kim, Ahmed N. Noemaun, Frank W. Mont et al. · Applied Physics Letters · 2008 · 74 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping

Di Zhu, Ahmed N. Noemaun, M. Schubert et al. · Applied Physics Letters · 2010 · 43 citations

Engineering, Electrical Engineering, Materials Science +17

Growth and characteristics of GaInN/GaInN multiple quantum well light-emitting diodes

Wonseok Lee, Minho Kim, Di Zhu et al. · Journal of Applied Physics · 2010 · 28 citations · Full text

Engineering, Electrical Engineering, Materials Science +17