Youssef El Gmili

Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy

Xin Li, Suresh Sundaram, Youssef El Gmili et al. · Crystal Growth & Design · 2016 · 137 citations

Materials Science, Semiconductors, Oxide Heterostructures +14

Bandgap energy bowing parameter of strained and relaxed InGaN layers

G. Orsal, Youssef El Gmili, Nicolas Fressengeas et al. · Optical Materials Express · 2014 · 99 citations · Full text

Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN

Taha Ayari, Suresh Sundaram, Xin Li et al. · Applied Physics Letters · 2016 · 89 citations

Materials Science, Scale Exfoliation, Epitaxial Growth +14

Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE

Xin Li, Matthew B. Jordan, Taha Ayari et al. · Scientific Reports · 2017 · 55 citations · Full text

Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE

Konstantinos Pantzas, Youssef El Gmili, Jeramy Ray Dickerson et al. · Journal of Crystal Growth · 2012 · 53 citations

Materials Engineering, Materials Science, Electrical Engineering +10