Youssef El Gmili - Concepedia

Author

Youssef El Gmili

Centre National de la Recherche Scientifique

Also Known As

El Gmili, Y., El Gmili, Youssef, Gmili, Youssef El, Y El Gmili, Y. El Gmili, Y.El. Gmili, Youssef El Gmili

Publications

914

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique Laboratoire Matériaux Optiques, Photonique et Systèmes Georgia Tech Lorraine Université de Lorraine Georgia Institute of Technology

About

Youssef El Gmili is an author at Centre National de la Recherche Scientifique specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	18	633
2	Applied Physics	14	18	633
3	Electrical Engineering	11	11	307
4	Materials Engineering	3	3	83
5	Chemistry	1	1	33

Youssef El Gmili

Publications

855

Citations

H-Index

Page 1

	Year	Citations
Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy Xin Li, Suresh Sundaram, Youssef El Gmili, Crystal Growth & Design Materials ScienceSemiconductorsOxide HeterostructuresEpitaxial GrowthEngineering	2016	137
Bandgap energy bowing parameter of strained and relaxed InGaN layers G. Orsal, Youssef El Gmili, Nicolas Fressengeas, Optical Materials Express	2014	99
Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN Taha Ayari, Suresh Sundaram, Xin Li, Applied Physics Letters Materials ScienceScale ExfoliationEpitaxial GrowthEngineeringNanoelectronics	2016	89
Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE Xin Li, Matthew B. Jordan, Taha Ayari, Scientific Reports	2017	55
Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE Konstantinos Pantzas, Youssef El Gmili, Jeramy Ray Dickerson, Journal of Crystal Growth Materials EngineeringMaterials ScienceElectrical EngineeringSemibulk InganEngineering	2012	53
Experimental Study and Device Design of NO, NO<sub>2</sub>, and NH<sub>3</sub>Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT Chris Bishop, Yacine Halfaya, A. Soltani, IEEE Sensors Journal Device ModelingElectrical EngineeringEngineeringSensorsHemt Device	2016	46
Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study Youssef El Gmili, G. Orsal, Konstantinos Pantzas, Acta Materialia Electrical EngineeringMultilayered Ingan/gan StructureEngineeringApplied PhysicsAluminum Gallium Nitride	2013	42
Highly sensitive detection of NO2 gas using BGaN/GaN superlattice-based double Schottky junction sensors C. Bishop, Jean‐Paul Salvestrini, Yacine Halfaya, Applied Physics Letters Sensitive DetectionWide-bandgap SemiconductorEngineeringGas SensorSemiconductors	2015	36
BAlN thin layers for deep UV applications Xin Li, Suresh Sundaram, Youssef El Gmili, physica status solidi (a) Materials ScienceBoron NitrideBaln Single LayersWurtzite Baln LayersCrystalline Defects	2015	33
AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm Xiangyang Li, Suresh Sundaram, P. Disseix, Optical Materials Express	2015	32

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