Electrical Characteristics of 8-nm SOI n-FinFETs

FinFET-a self-aligned double-gate MOSFET scalable to 20 nm

Chenming Hu, Jeffrey Bokor, Tsu‐Jae King et al. · IEEE Transactions on Electron Devices · 2000 · 1.6K citations

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A highly efficient flexible dye-sensitized solar cell based on nickel sulfide/platinum/titanium counter electrode

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Natural Sciences, Materials Engineering, Materials Science +17

High-<tex>$kappa$</tex>/Metal–Gate Stack and Its MOSFET Characteristics

R. Chau, Suman Datta, M. Doczy et al. · IEEE Electron Device Letters · 2004 · 468 citations

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Sub-50 nm P-channel FinFET

Xuejue Huang, Wen‐Chin Lee, C. Kuo et al. · IEEE Transactions on Electron Devices · 2001 · 283 citations

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Atomic beam deposition of lanthanum- and yttrium-based oxide thin films for gate dielectrics

Supratik Guha, E. Cartier, M. Gribelyuk et al. · Applied Physics Letters · 2000 · 238 citations

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