Memory Characteristics of Atomic-Layer-Deposited High-κ HfAlO Nanocrystal Capacitors

S. Maikap, P. J. Tzeng, T.-Y. Wang, Chia‐Hua Lin, L. S. Lee, Jer‐Ren Yang, M.-J. Tsai

Electrochemical and Solid-State Letters · 2008 · 24 citations · 15 references

Concepts

Abstract

The memory characteristics of atomic-layer-deposited high-κ nanocrystals in a /platinum structure have been investigated. After the annealing treatment, the high-κ nanocrystals with a small diameter of and high density of have been observed by high-resolution transmission electron microscopy. A large hysteresis memory window of has been obtained. The high-κ nanocrystal memory capacitor with a small capacitance equivalent thickness of shows a small leakage current density of at a gate voltage of . A large memory window of has also been observed after of retention, due to the charge confinement in the high-κ multilayer nanocrystals.

References

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