M.-J. Tsai - Concepedia

Author

M.-J. Tsai

Industrial Technology Research Institute ORCID

Also Known As

M-J Tsai, M. J. Tsai, M.-J Tsai, M.-J. Tsai, M.J. Tsai, Meng-Jung Chloe Tsai, Meng-Jung Tsai, Ming-J. Tsai

Publications

1.6K

Citations

H-Index

Concepts

All Affiliations

Industrial Technology Research Institute Chang Gung University National Taiwan University National Tsing Hua University National Central University

About

M.-J. Tsai is an author at Industrial Technology Research Institute specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	21	1.4K
2	Applied Physics	18	21	1.4K
3	Chemical Engineering	1	1	18
4	Chemistry	1	1	29
5	Computer Engineering	1	1	13

M.-J. Tsai

Publications

1.4K

Citations

H-Index

Page 1

	Year	Citations
Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM Hsuan‐Yu Lee, P. S. Chen, Tong Wu, Non-volatile MemoryEngineeringMemory DesignEmerging Memory TechnologyReactive Buffer Layer	2008	619
Charge trapping characteristics of atomic-layer-deposited HfO<sub>2</sub> films with Al<sub>2</sub>O<sub>3</sub> as a blocking oxide for high-density non-volatile memory device applications S. Maikap, H. Y. Lee, T-Y Wang, Semiconductor Science and Technology Materials ScienceNon-volatile MemoryElectrical EngineeringEngineeringOxide Electronics	2007	136
Bipolar Resistive Switching Memory Using Cu Metallic Filament in Ge[sub 0.4]Se[sub 0.6] Solid Electrolyte S. Z. Rahaman, S. Maikap, Hsien‐Chin Chiu, Electrochemical and Solid-State Letters Materials ScienceMaterials EngineeringElectrical EngineeringSolid ElectrolyteEngineering	2010	59
Repeatable unipolar/bipolar resistive memory characteristics and switching mechanism using a Cu nanofilament in a GeOx film S. Z. Rahaman, S. Maikap, Wen‐Shan Chen, Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringEngineeringMemory Characteristics	2012	58
Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots Wen‐Hao Chang, An-Tai Chou, W. Y. Chen, Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesIntegrated CircuitsRoom-temperature Electroluminescence	2003	58
Band offsets and charge storage characteristics of atomic layer deposited high-k HfO2∕TiO2 multilayers S. Maikap, T.-Y. Wang, P. J. Tzeng, Applied Physics Letters EngineeringHysteresis Memory WindowOptoelectronic DevicesHigh-k Hfo2∕tio2 MultilayersAtomic Layer	2007	58
Impact of TaOx nanolayer at the GeSex/W interface on resistive switching memory performance and investigation of Cu nanofilament S. Z. Rahaman, S. Maikap, W. S. Chen, Journal of Applied Physics EngineeringEmerging Memory TechnologyTaox MaterialsPhase Change MemoryTaox Nanolayer	2012	56
Self-assembled nanorings in Si-capped Ge quantum dots on (001)Si S. W. Lee, L. J. Chen, P. S. Chen, Applied Physics Letters EngineeringSilicon On InsulatorPhysical PropertiesSemiconductor NanostructuresSelf-assembled Nanorings	2003	51
Novel SONOS-Type Nonvolatile Memory Device With Optimal Al Doping in HfAlO Charge-Trapping Layer Ping-Hung Tsai, Kuei‐Shu Chang‐Liao, Chu-Yung Liu, IEEE Electron Device Letters Materials ScienceNon-volatile MemoryElectrical EngineeringEngineeringMicrofabrication	2008	45
Charge storage characteristics of atomic layer deposited RuOx nanocrystals S. Maikap, T. Y. Wang, P. J. Tzeng, Applied Physics Letters Materials ScienceSemiconductorsRuox NanocrystalsEngineeringBattery Electrode Materials	2007	44

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