IEEE Transactions on Nuclear Science · 2014 · 64 citations · 15 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ModelingDevice ReliabilitySemiconductor ReliabilityWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsElectron MobilityEnhancement-mode TransistorsGallium Nitride Power DevicesHigh-electron-mobility TransistorsPower Integrated CircuitsPower Management CircuitsPower Management Integrated CircuitsSingle Event Effects
Characterization of destructive single-event effects in enhancement mode gallium nitride high electron mobility transistors is presented as related to the optimal application of and operating conditions for power management circuits. A mechanism for the phenomenon is also presented.
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Jesús A. del Alamo, Jungwoo Joh · Microelectronics Reliability · 2009 · 483 citations
Radiation hardness of gallium nitride
A. Ionascut-Nedelcescu, C. Carlone, A. Houdayer et al. · IEEE Transactions on Nuclear Science · 2002 · 343 citations