Low power switching of Si-doped Ta₂O₅ resistive random access memory for high density memory application

Abstract

Abstract We report, for the first time, the resistive switching properties of Si-doped Ta 2 O 5 grown by atomic layer deposition (ALD). The reduced switching current, improved on/off current ratio, and excellent endurance property are demonstrated in the Si-doped Ta 2 O 5 resistive random access memory (ReRAM) devices of 50 nm tech node. The switching mechanism for the Si-doped Ta 2 O 5 resistor is discussed. Si dopants enable switching layer to have conformal distribution of oxygen vacancy and easily form conductive filament. This leads to higher on/off current ratio at even low operation current of 5–10 µA. Finally, one selector–one resistor (1S1R) ReRAM was developed for large cell array application. For the optimized 1S1R stack, 0.2 µA of off current and 5.0 of on/off current ratio were successfully achieved at 10 µA of low operation current.