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A comparative study on the properties of c-plane and a-plane GaN epitaxial films grown on sapphire substrates by pulsed laser deposition

Electrical EngineeringEpitaxial GrowthEngineeringSapphire SubstratesApplied PhysicsAluminum Gallium NitrideComparative StudyGan Power DeviceLaser DepositionPulsed Laser DepositionCategoryiii-v SemiconductorOptoelectronics