Meijuan Yang

A comparative study on the properties of c-plane and a-plane GaN epitaxial films grown on sapphire substrates by pulsed laser deposition

Wenliang Wang, Weijia Yang, Haiyan Wang et al. · Vacuum · 2016 · 38 citations

Natural Sciences, Materials Engineering, Materials Science +17

Epitaxial growth of high quality AlN films on Si substrates

Meijuan Yang, Wenliang Wang, Yunhao Lin et al. · Materials Letters · 2016 · 31 citations

Engineering, Materials Engineering, Materials Science +16

High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer

Yunhao Lin, Meijuan Yang, Wenliang Wang et al. · CrystEngComm · 2016 · 29 citations

Engineering, Materials Engineering, Materials Science +17

Achieving High-Performance Blue GaN-Based Light-Emitting Diodes by Energy Band Modification on Al_{<italic>x</italic>}In_{<italic>y</italic>}Ga_{1–<italic>x</italic>–<italic>y</italic>}N Electron Blocking Layer

Zhiting Lin, Haiyan Wang, Shuqi Chen et al. · IEEE Transactions on Electron Devices · 2016 · 21 citations

Engineering, Electrical Engineering, Materials Science +17

Influence of In content in InGaN barriers on crystalline quality and carrier transport of GaN-based light-emitting diodes

Zhiting Lin, Haiyan Wang, Yunhao Lin et al. · Journal of Physics D Applied Physics · 2016 · 14 citations

Engineering, Electrical Engineering, Materials Science +17