2014 · 75 citations · 6 references
EngineeringElectrical EngineeringMicroelectronicsPower ElectronicsSemiconductor DevicesDevice CharacterizationDevice ReliabilityPower System ReliabilitySemiconductor ReliabilityShort-channel EffectsWide Band Gap SemiconductorsPower Device ReliabilityPower MosfetsReliability Analysis Of Power ElectronicsReliability Of Power Electronic SystemsSilicon Carbide Power DevicesSilicon Carbide Power ElectronicsThreshold VoltageThreshold Voltage Stability
In this paper, we present reliability and stability data based on a large body of data accumulated from high volume production of SiC power MOSFETs. The SiC MOSFETs (Gen2, C2M) showed excellent body diode and threshold voltage stability after 1000 hours of accelerated stressing tests. Results from next generation SiC power MOSFET development efforts are also presented. A significant reduction in specific on-resistance was demonstrated, and a wide range of blocking voltages, from 900 V to 15 kV, has also been demonstrated.
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Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes
H. Lendenmann, Fanny Dahlquist, Nils Johansson et al. · Materials science forum · 2001 · 262 citations
Engineering, Electrical Engineering, Semiconductor Devices +4
4H-SiC Trench MOSFET with Bottom Oxide Protection
Yasuhiro Kagawa, Nobuo Fujiwara, Katsutoshi Sugawara et al. · Materials science forum · 2014 · 104 citations · Full text
Engineering, Electrical Engineering, Electronic Materials +12