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Publication | Open Access

Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell

DOIFull Paper Access

64

Citations

20

References

2015

Year

Tae Hyung Park, Seul Ji Song, Hae Jin Kim, Soo Gil Kim, Suock Chung, Beom Yong Kim, Kee Jeung Lee, Kyung Min Kim, Byung Joon Choi, Cheol Seong Hwang
Scientific Reports

References

YearCitations

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