Suock Chung

Fully integrated 54nm STT-RAM with the smallest bit cell dimension for high density memory application

Suock Chung, K.-M. Rho, Sarim Kim et al. · 2010 · 89 citations

Spintronics, Electrical Engineering, Memory Architecture +15

Ultrathin (<10nm) Nb<inf>2</inf>O<inf>5</inf>/NbO<inf>2</inf> hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications

Seonghyun Kim, Xinjun Liu, Jubong Park et al. · 2012 · 80 citations · Full text

Engineering, Emerging Memory Technology, Computer Architecture +20

Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell

Tae Hyung Park, Seul Ji Song, Hae Jin Kim et al. · Scientific Reports · 2015 · 64 citations · Full text

NbO<inf>2</inf>-based low power and cost effective 1S1R switching for high density cross point ReRAM Application

Wan Gee Kim, Hyun Min Lee, Beom Yong Kim et al. · 2014 · 37 citations

Low-power Electronics, Low Power, Electrical Engineering +14

Varistor-type bidirectional switch (J<inf>MAX</inf>>10<sup>7</sup>A/cm<sup>2</sup>, selectivity∼10<sup>4</sup>) for 3D bipolar resistive memory arrays

Wootae Lee, Jubong Park, Jungho Shin et al. · 2012 · 31 citations

Device Modeling, Non-volatile Memory, Electrical Engineering +14