NbO<inf>2</inf>-based low power and cost effective 1S1R switching for high density cross point ReRAM Application

Abstract

In this paper, 5Xnm cross point cell array for the low power ReRAM operation was developed with 1S1R cell structure. Through the optimization of both TiOx/TaOx based-1R and NbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> based-1S stacks with TiN based-electrode, the world's first and best bipolar switching characteristics with the lowest operation current (20~50uA) and sneak current (~1uA) level were acquired.