Hyung Dong Lee

Model of metallic filament formation and rupture in NiO for unipolar switching

Hyung Dong Lee, Blanka Magyari-Köpe, Yoshio Nishi · Physical Review B · 2010 · 106 citations

Metallic Filament Formation, Engineering, Filament Rupture Processes +20

Ultrathin (<10nm) Nb<inf>2</inf>O<inf>5</inf>/NbO<inf>2</inf> hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications

Seonghyun Kim, Xinjun Liu, Jubong Park et al. · 2012 · 80 citations · Full text

Engineering, Emerging Memory Technology, Computer Architecture +20

Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO₂, NiO and Pr_0.7Ca_0.3MnO₃

Blanka Magyari-Köpe, Mihir Tendulkar, Seong-Geon Park et al. · Nanotechnology · 2011 · 74 citations

Non-volatile Memory, Point Defects, Engineering +16

Integration of 4F2 selector-less crossbar array 2Mb ReRAM based on transition metal oxides for high density memory applications

Hyung Dong Lee, S. G. Kim, K. Cho et al. · 2012 · 64 citations

Materials Science, Memory Operation, Electrical Engineering +15

NbO<inf>2</inf>-based low power and cost effective 1S1R switching for high density cross point ReRAM Application

Wan Gee Kim, Hyun Min Lee, Beom Yong Kim et al. · 2014 · 37 citations

Low-power Electronics, Low Power, Electrical Engineering +14