Beom Yong Kim

A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors

Baek Su Kim, Seung Dam Hyun, Taehwan Moon et al. · Nanoscale Research Letters · 2020 · 63 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Polarizing and depolarizing charge injection through a thin dielectric layer in a ferroelectric–dielectric bilayer

Hyeon Woo Park, Seung Dam Hyun, In Soo Lee et al. · Nanoscale · 2020 · 54 citations

Natural Sciences, Electrical Engineering, Materials Science +12

Enhanced Ferroelectric Properties in Hf_0.5Zr_0.5O₂ Films Using a HfO_0.61N_0.72 Interfacial Layer

Beom Yong Kim, Hyeon Woo Park, Seung Dam Hyun et al. · Advanced Electronic Materials · 2021 · 50 citations

Natural Sciences, Materials Engineering, Materials Science +17

Field‐Induced Ferroelectric Hf_1‐<i>_x</i>Zr<i>_x</i>O₂ Thin Films for High‐<i>k</i> Dynamic Random Access Memory

Seung Dam Hyun, Hyeon Woo Park, Min Hyuk Park et al. · Advanced Electronic Materials · 2020 · 40 citations

Natural Sciences, Materials Engineering, Materials Science +17

NbO&lt;inf&gt;2&lt;/inf&gt;-based low power and cost effective 1S1R switching for high density cross point ReRAM Application

Wan Gee Kim, Hyun Min Lee, Beom Yong Kim et al. · 2014 · 37 citations

Engineering, Electrical Engineering, Materials Science +14