SK Group (United States)

Institution (Company)

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Also Known As

Hynix Semiconductors, Hyundai Electronics, SK Group (United States), SK Hynix, Sunkyong Group

774

Publications

37.1K

Citations

238

Authors

296

Concepts

About

SK Group (United States) is a company institution in San Jose, United States known for engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	39	743	28.3K
2	Medicine	4	7	138
3	Business	1	1	13
4	Language Studies	1	1	25
5	Management	1	1	21

SK Group (United States)

774

Publications

37.1K

Citations

Page 1

	Year	Citations
Carbon nanotube computer Max M. Shulaker, Gage Hills, Nishant Patil, Nature EngineeringCarbon-based MaterialCarbon Nanotube ComputerNanomaterialsNanonetwork	2013	949
High-Frequency Scalable Electrical Model and Analysis of a Through Silicon Via (TSV) Joohee Kim, Jun So Pak, Jonghyun Cho, IEEE Transactions on Components Packaging and Manufacturing Technology EngineeringVlsi DesignScalable ModelTsv ChannelIntegrated Circuits	2011	479
Accurate recovery of three-dimensional shape from image focus Murali Subbarao, Tao Choi IEEE Transactions on Pattern Analysis and Machine Intelligence EngineeringShape RecoveryGeometryFocused Image ReconstructionImage Analysis	1995	250
Conditional-capture flip-flop for statistical power reduction Bai‐Sun Kong, Sam-Soo Kim, Young-Hyun Jun IEEE Journal of Solid-State Circuits EngineeringVlsi DesignPower Optimization (Eda)Computer ArchitectureHardware Security	2001	177
Modeling and Analysis of Through-Silicon Via (TSV) Noise Coupling and Suppression Using a Guard Ring Jonghyun Cho, Eakhwan Song, Ki-Hyun Yoon, IEEE Transactions on Components Packaging and Manufacturing Technology EngineeringThrough-silicon ViaInterconnect (Integrated Circuits)Noise ReductionElectromagnetic Compatibility	2011	164
PDN Impedance Modeling and Analysis of 3D TSV IC by Using Proposed P/G TSV Array Model Based on Separated P/G TSV and Chip-PDN Models Jun So Pak, Joohee Kim, Jonghyun Cho, IEEE Transactions on Components Packaging and Manufacturing Technology EngineeringChip-pdn ModelsPower ElectronicsInterconnect (Integrated Circuits)Electromagnetic Compatibility	2011	128
Device considerations for high density and highly reliable 3D NAND flash cell in near future Eun-Seok Choi, Sung-Kye Park	2012	125
Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate Seung-Chul Ha, Eunsuk Choi, Soo‐Hyun Kim, Thin Solid Films Materials ScienceEngineeringHydrogen-terminated Si SubstrateOxidant SourceOxide Electronics	2005	119
Technology Scaling Challenge and Future Prospects of DRAM and NAND Flash Memory Sung-Kye Park Hardware SecurityScaling LimitationsElectrical EngineeringFuture ProspectsEngineering	2015	110
A 1.2 V 8 Gb 8-Channel 128 GB/s High-Bandwidth Memory (HBM) Stacked DRAM With Effective I/O Test Circuits Dong Uk Lee, Kyung Whan Kim, Kwan Weon Kim, IEEE Journal of Solid-State Circuits Electrical EngineeringEngineeringGb/s High-bandwidth MemoryHigh Bandwidth MemoryHbm Dram	2014	103

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