Xinjun Liu

Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications

Xun Cao, Xiaomin Li, Xiangdong Gao et al. · Journal of Applied Physics · 2009 · 140 citations

Engineering, Material Innovation, Interesting Rs Behavior +16

Diode-less bilayer oxide (WO_<i>x</i>–NbO_<i>x</i>) device for cross-point resistive memory applications

Xinjun Liu, Sharif Sadaf, Myungwoo Son et al. · Nanotechnology · 2011 · 97 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +17

Threshold switching and electrical self-oscillation in niobium oxide films

Xinjun Liu, Shuai Li, Sanjoy Kumar Nandi et al. · Journal of Applied Physics · 2016 · 92 citations

Engineering, Nbox Devices, Circuit Neuroscience +19

Threshold current reduction for the metal–insulator transition in NbO_2−<i>x</i>-selector devices: the effect of ReRAM integration

Sanjoy Kumar Nandi, Xinjun Liu, Dinesh Kumar Venkatachalam et al. · Journal of Physics D Applied Physics · 2015 · 87 citations

Co-Occurrence of Threshold Switching and Memory Switching in $\hbox{Pt}/\hbox{NbO}_{x}/\hbox{Pt}$ Cells for Crosspoint Memory Applications

Xinjun Liu, Sharif Sadaf, Myungwoo Son et al. · IEEE Electron Device Letters · 2011 · 85 citations · Full text

Non-volatile Memory, Engineering, Emerging Memory Technology +18