Dinesh Kumar Venkatachalam

Threshold switching and electrical self-oscillation in niobium oxide films

Xinjun Liu, Shuai Li, Sanjoy Kumar Nandi et al. · Journal of Applied Physics · 2016 · 92 citations

Engineering, Nbox Devices, Circuit Neuroscience +19

Threshold current reduction for the metal–insulator transition in NbO_2−<i>x</i>-selector devices: the effect of ReRAM integration

Sanjoy Kumar Nandi, Xinjun Liu, Dinesh Kumar Venkatachalam et al. · Journal of Physics D Applied Physics · 2015 · 87 citations

Damage tolerance of Ti3SiC2 to high energy iodine irradiation

Lei Zhang, Qi Qi, Linna Shi et al. · Applied Surface Science · 2012 · 87 citations

Materials Engineering, Energy Iodine Irradiation, Radiation Effect +2

Reduced Threshold Current in NbO₂ Selector by Engineering Device Structure

Xinjun Liu, Sanjoy Kumar Nandi, Dinesh Kumar Venkatachalam et al. · IEEE Electron Device Letters · 2014 · 66 citations

Device Modeling, Electrical Engineering, Thermal Confinement Effect +11

High-endurance megahertz electrical self-oscillation in Ti/NbO<i>x</i> bilayer structures

Shuai Li, Xinjun Liu, Sanjoy Kumar Nandi et al. · Applied Physics Letters · 2015 · 60 citations · Full text

Engineering, Oscillators, Neurochip +17