Co-Occurrence of Threshold Switching and Memory Switching in $\hbox{Pt}/\hbox{NbO}_{x}/\hbox{Pt}$ Cells for Crosspoint Memory Applications

Abstract

To integrate bipolar resistive switching cells into crosspoint structures, we serially connect a threshold-switching (TS) <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\hbox{Pt}/\hbox{NbO}_{2}/\hbox{Pt}$</tex></formula> device with a memory-switching (MS) <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\hbox{Pt}/\hbox{Nb}_{2}\hbox{O}_{5}/ \hbox{Pt}$</tex></formula> device and observe the suppression of the undesired sneak current. A simpler <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\hbox{Pt}/\hbox{Nb}_{2}\hbox{O}_{5}/\hbox{NbO}_{2}/\hbox{Pt}$</tex></formula> bilayer oxide device was designed; it simultaneously exhibits TS and MS. The unique device characteristics in the metal/oxide/metal structure can be directly integrated into a crosspoint memory array without the diode; this can significantly reduce the fabrication complexity.