Seonghyun Kim - Concepedia

Author

Seonghyun Kim

Gwangju Institute of Science and Technology ORCID

Also Known As

Ahn, Ryan Tenu, Kim, Donghyun, Kim, Seonghyeon, Kim, Seonghyun, Sang Hoon Lee, Seonghyeon Kim, Seonghyun KIM, Seonghyun Kim, Sung Hyun Kim, Undergraduate Student, DGIST, Daegu, Korea (ksh0522, rhgkrsus1, mini1774, )

1.6K

Publications

3.3K

Citations

H-Index

108

Concepts

All Affiliations

Gwangju Institute of Science and Technology Pohang University of Science and Technology Yonsei University Samsung (South Korea)

About

Seonghyun Kim is an author at Gwangju Institute of Science and Technology specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	27	53	2.2K
2	Language Studies	2	2	116
3	Natural Sciences	2	2	32
4	Health Sciences	1	1	14
5	Medicine	1	1	15

Seonghyun Kim

Publications

2.3K

Citations

H-Index

Page 1

	Year	Citations
Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications Myungwoo Son, Joonmyoung Lee, Jubong Park, IEEE Electron Device Letters Materials ScienceMaterials EngineeringElectrical EngineeringNanoscale VanadiumHigh On/off Ratio	2011	296
TiO 2 -based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application Jungho Shin, Insung Kim, Kuyyadi P. Biju, Journal of Applied Physics Materials EngineeringNon-volatile MemoryElectrical EngineeringEngineeringNanoelectronics	2011	162
High Current Density and Nonlinearity Combination of Selection Device Based on TaO<sub><i>x</i></sub>/TiO<sub>2</sub>/TaO<sub><i>x</i></sub> Structure for One Selector–One Resistor Arrays Wootae Lee, Jubong Park, Seonghyun Kim, ACS Nano Materials ScienceBottom TaoElectrical EngineeringElectronic DevicesHigh-performance Selection Device	2012	149
Multibit Operation of $\hbox{TiO}_{x}$ -Based ReRAM by Schottky Barrier Height Engineering Jubong Park, Kuyyadi P. Biju, Seungjae Jung, IEEE Electron Device Letters Materials EngineeringSemiconductorsElectrical EngineeringElectronic DevicesEngineering	2011	107
Diode-less nano-scale ZrO<inf>x</inf>/HfO<inf>x</inf> RRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications Joonmyoung Lee, Daeseok Lee, Wootae Lee, EngineeringEmerging Memory TechnologyDiode-less Nano-scale ZroOptoelectronic DevicesThin Film Process Technology	2010	85
Ultrathin (&amp;lt;10nm) Nb<inf>2</inf>O<inf>5</inf>/NbO<inf>2</inf> hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications Seonghyun Kim, Xinjun Liu, Jubong Park, EngineeringEmerging Memory TechnologyComputer ArchitectureHybrid Memory DevicesHybrid Memory	2012	80
KLUE: Korean Language Understanding Evaluation Sungjoon Park, Jihyung Moon, Sungdong Kim, arXiv (Cornell University) Natural Language ProcessingLlm Fine-tuningBpe TokenizationKlue Benchmark SuiteBenchmark Tasks	2021	78
Resistive switching characteristics and mechanism of thermally grown WOx thin films Kuyyadi P. Biju, Xinjun Liu, Manzar Siddik, Journal of Applied Physics Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesClockwise Switching	2011	77
Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories Seonghyun Kim, Jubong Park, Jiyong Woo, Microelectronic Engineering Materials ScienceElectrical EngineeringNanothin-nbo2-layer-based Pt/nbo2/pt StackEngineeringCross-point-type Resistive Memories	2013	64
Complementary Resistive Switching in Niobium Oxide-Based Resistive Memory Devices Xinjun Liu, Sharif Sadaf, Sangsu Park, IEEE Electron Device Letters Non-volatile MemoryElectrical EngineeringEngineeringPhysicsElectronic Memory	2013	62

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