Seonghyun Kim

Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications

Myungwoo Son, Joonmyoung Lee, Jubong Park et al. · IEEE Electron Device Letters · 2011 · 296 citations

Materials Science, Materials Engineering, Electrical Engineering +9

TiO 2 -based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application

Jungho Shin, Insung Kim, Kuyyadi P. Biju et al. · Journal of Applied Physics · 2011 · 162 citations

Materials Engineering, Non-volatile Memory, Electrical Engineering +15

High Current Density and Nonlinearity Combination of Selection Device Based on TaO_<i>x</i>/TiO₂/TaO_<i>x</i> Structure for One Selector–One Resistor Arrays

Wootae Lee, Jubong Park, Seonghyun Kim et al. · ACS Nano · 2012 · 149 citations

Materials Science, Bottom Tao, Electrical Engineering +15

Multibit Operation of $\hbox{TiO}_{x}$ -Based ReRAM by Schottky Barrier Height Engineering

Jubong Park, Kuyyadi P. Biju, Seungjae Jung et al. · IEEE Electron Device Letters · 2011 · 107 citations

Materials Engineering, Semiconductors, Electrical Engineering +14

Diode-less nano-scale ZrO&lt;inf&gt;x&lt;/inf&gt;/HfO&lt;inf&gt;x&lt;/inf&gt; RRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications

Joonmyoung Lee, Daeseok Lee, Wootae Lee et al. · 2010 · 85 citations

Engineering, Emerging Memory Technology, Diode-less Nano-scale Zro +22