Jong Hee Yoo

Roles of interfacial TiOxN1−x layer and TiN electrode on bipolar resistive switching in TiN/TiO2/TiN frameworks

June Sik Kwak, Young Ho, Yoon Cheol Bae et al. · Applied Physics Letters · 2010 · 59 citations

Natural Sciences, Materials Engineering, Materials Science +16

NbO<inf>2</inf>-based low power and cost effective 1S1R switching for high density cross point ReRAM Application

Wan Gee Kim, Hyun Min Lee, Beom Yong Kim et al. · 2014 · 37 citations

Engineering, Electrical Engineering, Materials Science +14

<i>In situ</i> TEM observation of void formation and migration in phase change memory devices with confined nanoscale Ge₂Sb₂Te₅

Sang Ho Oh, Kyungjoon Baek, Sung Kyu Son et al. · Nanoscale Advances · 2020 · 37 citations · Full text

Natural Sciences, Materials Science, Physics +17

Improvement of characteristics of NbO2 selector and full integration of 4F2 2x-nm tech 1S1R ReRAM

Soo Gil Kim, Tae Jung Ha, Seonghyun Kim et al. · 2015 · 20 citations

Engineering, Materials Engineering, Materials Science +17

Dependence of the switching characteristics of resistance random access memory on the type of transition metal oxide

Wan Gee Kim, Min Gyu Sung, Sook Joo Kim et al. · 2010 · 19 citations

Engineering, Materials Engineering, Materials Science +17