2015 · 20 citations · 5 references
EngineeringMaterials EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationIntegrated Circuit DesignSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor InterfacesSemiconductor Thin FilmsBarriersFormingGate Stack EngineeringHigh-density Memory MaterialsN-type Oxide SemiconductorsSpacer DesignSpacer TechnologyStack Design
In this paper, the authors report that 2x nm cross-point ReRAM with 1S1R structure has been successfully developed. Off-current at 1/2 Vsw of 1S1R is one of key factor for high-density ReRAM. NbO2 was chosen as a selector material and off-current and forming characteristics were improved by using stack engineering of top and bottom barriers as well as spacer materials. Finally array operation was characterized with the integration of selector and resistor materials.
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