$\hbox{HfO}_{x}$ Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode

Abstract

A novel method of fabricating HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> -based resistive memory device with excellent nonvolatile characteristics is proposed. By using a thin AlCu layer as the reactive buffer layer into the anodic side of a capacitor-like memory cell, excellent memory performances, which include reliable programming/erasing endurance (> 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> cycles), robust data retention at high temperature, and fast operation speed (< 50 ns), have been demonstrated. The resistive memory based on AlCu/HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> stacked layer in this letter shows promising application in the next generation of nonvolatile memory.