Low-threshold, high-temperature operation of 1.2µmInGaAs vertical cavity lasers

Abstract

The growth and characterisation of high performance InGaAs/GaAs quantum-well vertical cavity lasers with an emission wavelength of 1215 nm is reported. Continuous wave operation is demonstrated up to 105°C with a threshold current below 1 mA for T < 80°C. For a 2.5 µm device the room temperature threshold current, output power and slope efficiency is 0.6 mA, 0.6 mW and 0.2 W/A, respectively.