P. Sundgren

Temperature sensitivity of the threshold current of long-wavelength InGaAs-GaAs VCSELs with large gain-cavity detuning

S. Mogg, N. Chiţică, Ulf Christiansson et al. · IEEE Journal of Quantum Electronics · 2004 · 61 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +15

High-performance 1.3 µm InGaAs vertical cavity surface emitting lasers

P. Sundgren, Rickard Marcks von Würtemberg, J. Berggren et al. · Electronics Letters · 2003 · 46 citations

New developments on high-efficiency infrared and InGaAlP light-emitting diodes at OSRAM Opto Semiconductors

Markus Broell, P. Sundgren, Andreas Rudolph et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2014 · 35 citations

Bare Chip, Engineering, Optical Properties +19

Highly strained InGaAs∕GaAs multiple quantum-wells for laser applications in the 1200–1300 nm wavelength regime

P. Sundgren, J. Berggren, P. Goldman et al. · Applied Physics Letters · 2005 · 34 citations

Ingaas∕gaas Multiple Quantum-wells, Engineering, Layer Integrity +18

1260 nm InGaAs vertical-cavity lasers

C. Asplund, P. Sundgren, S. Mogg et al. · Electronics Letters · 2002 · 29 citations

Device Diameter, Photonics, Room Temperature +14