Defects in GaN single crystals and homoepitaxial structures

Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations

C. Youtsey, Lucia Romano, I. Adesida · Applied Physics Letters · 1998 · 228 citations

Engineering, Materials Engineering, Materials Science +17

Chemical polishing of bulk and epitaxial GaN

J.L. Weyher, S. Müller, I. Grzegory et al. · Journal of Crystal Growth · 1997 · 172 citations

Engineering, Materials Engineering, Materials Science +14

Recent advances in defect-selective etching of GaN

J.L. Weyher, Paul D. Brown, Jean‐Luc Rouvière et al. · Journal of Crystal Growth · 2000 · 133 citations

Engineering, Materials Engineering, Materials Science +14

High pressure growth of bulk GaN from solutions in gallium

I. Grzegory · Journal of Physics Condensed Matter · 2001 · 99 citations

Natural Sciences, Materials Engineering, Materials Science +16

Defect-selective etching of GaN in a modified molten bases system

G. Kamler, J.L. Weyher, I. Grzegory et al. · Journal of Crystal Growth · 2002 · 99 citations

Engineering, Materials Engineering, Materials Science +14