Concepedia

M. Kryśko

MK

36

Publications

865

Citations

19

H-Index

2003

Active since

Affiliations

Institute of High Pressure Physics(Current)

TopGaN (Poland)

Polish Academy of Sciences

Institute of Physics

Leibniz Institute for Crystal Growth

M. Kryśko is an author at Institute of High Pressure Physics specializing in applied physics, engineering, and materials science.

Top concepts

EngineeringApplied PhysicsMaterial SciencePhysicsOptoelectronicsElectrical EngineeringCrystalline DefectsMaterials EngineeringSurface ScienceSemiconductors

Publications per year

2003–2021

36

Publications

36

AlGaN/GaN HEMT structures on ammono bulk GaN substrate

P. Kruszewski, P. Prystawko, Irmantas Kašalynas et al. · Semiconductor Science and Technology · 2014 · 64 citations

Materials Engineering, Semiconductors, Electrical Engineering +12

Influence of GaN substrate off‐cut on properties of InGaN and AlGaN layers

M. Sarzyński, M. Leszczyński, M. Kryśko et al. · Crystal Research and Technology · 2011 · 51 citations

Materials Engineering, Materials Science, Electrical Engineering +12

Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy

M. Siekacz, Marta Sawicka, Henryk Turski et al. · Journal of Applied Physics · 2011 · 47 citations

Engineering, Laser Material, Semiconductor Lasers +17

Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy

M. Leszczyński, R. Czernecki, Stanisław Krukowski et al. · Journal of Crystal Growth · 2010 · 43 citations

Materials Science, Materials Engineering, Electrical Engineering +9

Growth of InGaN and InGaN/InGaN quantum wells by plasma-assisted molecular beam epitaxy

M. Siekacz, Anna Feduniewicz‐Żmuda, G. Cywiński et al. · Journal of Crystal Growth · 2008 · 41 citations

Materials Science, Epitaxial Growth, Engineering +9

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