M. Kryśko - Concepedia

Author

M. Kryśko

Institute of High Pressure Physics ORCID

Also Known As

M Krysko, M Kryśko, M. Krysko, M. Kryśko, Marcin Krysko, Marcin Kryśko

Publications

1.1K

Citations

H-Index

Concepts

All Affiliations

Institute of High Pressure Physics TopGaN (Poland)Polish Academy of Sciences Institute of Physics Leibniz Institute for Crystal Growth

About

M. Kryśko is an author at Institute of High Pressure Physics specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	33	816
2	Applied Physics	18	33	816
3	Electrical Engineering	13	16	438
4	Materials Engineering	10	10	294
5	Engineering Physics	1	1	14

M. Kryśko

Publications

865

Citations

H-Index

Page 1

	Year	Citations
AlGaN/GaN HEMT structures on ammono bulk GaN substrate P. Kruszewski, P. Prystawko, Irmantas Kašalynas, Semiconductor Science and Technology Materials EngineeringSemiconductorsElectrical EngineeringElectronic DevicesEngineering	2014	64
Influence of GaN substrate off‐cut on properties of InGaN and AlGaN layers M. Sarzyński, M. Leszczyński, M. Kryśko, Crystal Research and Technology Materials EngineeringMaterials ScienceElectrical EngineeringWide-bandgap SemiconductorEngineering	2011	51
Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy M. Siekacz, Marta Sawicka, Henryk Turski, Journal of Applied Physics EngineeringLaser MaterialSemiconductor LasersOptical PropertiesMolecular Beam Epitaxy	2011	47
Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy M. Leszczyński, R. Czernecki, Stanisław Krukowski, Journal of Crystal Growth Materials ScienceMaterials EngineeringElectrical EngineeringInaln LayersEngineering	2010	43
Growth of InGaN and InGaN/InGaN quantum wells by plasma-assisted molecular beam epitaxy M. Siekacz, Anna Feduniewicz‐Żmuda, G. Cywiński, Journal of Crystal Growth Materials ScienceEpitaxial GrowthEngineeringPhysicsNanoelectronics	2008	41
The influence of lattice parameter variation on microstructure of GaN single crystals M. Kryśko, M. Sarzyński, J. Z. Domagała, Journal of Alloys and Compounds Materials ScienceLattice Parameter VariationWide-bandgap SemiconductorEngineeringPhysics	2005	41
Correlation between luminescence and compositional striations in InGaN layers grown on miscut GaN substrates M. Kryśko, G. Franssen, T. Suski, Applied Physics Letters Wide-bandgap SemiconductorOptical MaterialsEngineeringMiscut AngleMiscut Gan Substrates	2007	40
Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy T. Suski, E. Litwin‐Staszewska, R. Piotrzkowski, Applied Physics Letters Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringMg Resistivity	2008	31
Growth of thin AlInN∕GaInN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths G. Cywiński, C. Skierbiszewski, A. Fedunieiwcz-Żmuda, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Wide-bandgap SemiconductorEngineeringTelecommunication WavelengthsBulk Gan CrystalsSemiconductor Nanostructures	2006	31
Defects in GaN single crystals and homoepitaxial structures J.L. Weyher, G. Kamler, G. Nowak, Journal of Crystal Growth EngineeringCrystalline DefectsApplied PhysicsQuantum MaterialsCondensed Matter Physics	2005	30

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