Anna Feduniewicz‐Żmuda

60 mW continuous-wave operation of InGaN laser diodes made by plasma-assisted molecular-beam epitaxy

C. Skierbiszewski, P. Wiśniewski, M. Siekacz et al. · Applied Physics Letters · 2006 · 51 citations

Ingan Lds, Engineering, Laser-plasma Interaction +18

Growth of InGaN and InGaN/InGaN quantum wells by plasma-assisted molecular beam epitaxy

M. Siekacz, Anna Feduniewicz‐Żmuda, G. Cywiński et al. · Journal of Crystal Growth · 2008 · 41 citations

Materials Science, Epitaxial Growth, Engineering +9

True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy

C. Skierbiszewski, Krzesimir Nowakowski-Szkudlarek, Henryk Turski et al. · Applied Physics Express · 2018 · 41 citations · Full text

Optical Materials, Engineering, Laser Applications +18

Unusual step meandering due to Ehrlich-Schwoebel barrier in GaN epitaxy on the N-polar surface

Henryk Turski, Filip Krzyżewski, Anna Feduniewicz‐Żmuda et al. · Applied Surface Science · 2019 · 39 citations

Wide-bandgap Semiconductor, Engineering, Physics +9

InGaN light emitting diodes for 415 nm–520 nm spectral range by plasma assisted MBE

M. Siekacz, M. Ł. Szańkowska, Anna Feduniewicz‐Żmuda et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2009 · 37 citations

Optical Materials, Engineering, Optoelectronic Devices +21