Filip Krzyżewski

Unusual step meandering due to Ehrlich-Schwoebel barrier in GaN epitaxy on the N-polar surface

Henryk Turski, Filip Krzyżewski, Anna Feduniewicz‐Żmuda et al. · Applied Surface Science · 2019 · 39 citations

Wide-bandgap Semiconductor, Engineering, Physics +9

Double step structure and meandering due to the many body interaction at GaN(0001) surface in N-rich conditions

Magdalena A. Załuska–Kotur, Filip Krzyżewski, Stanisław Krukowski · Journal of Applied Physics · 2011 · 26 citations · Full text

Step bunching with both directions of the current: Vicinal W(110) surfaces versus atomistic-scale model

Olzat Toktarbaiuly, Cormac Ó Coileáin, Katarzyna Siewierska et al. · Physical review. B./Physical review. B · 2018 · 24 citations · Full text

Atomistic-scale Model, Engineering, Step Bunching +16

Step bunching process induced by the flow of steps at the sublimated crystal surface

Magdalena A. Załuska–Kotur, Filip Krzyżewski · Journal of Applied Physics · 2012 · 23 citations · Full text

Materials Science, Engineering, Surface Pattern Evolution +15

Emergence of regular meandered step structure in simulated growth of GaN(0001) surface

Magdalena A. Załuska–Kotur, Filip Krzyżewski, Stanisław Krukowski · Journal of Crystal Growth · 2012 · 21 citations

Wide-bandgap Semiconductor, Simulated Growth, Engineering +9