Crystal Research and Technology · 2011 · 53 citations · 14 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsLaser DiodesSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor InterfacesSemiconductor LasersSemiconductor PhysicsCell DeformationGallium Nitride (Gan) MaterialsHeterostructure DevicesLattice PlanesRed Laser DiodesSemiconductor Laser DiodesStrained Layer StructuresUnit Cell Geometry
Abstract This paper summarizes the knowledge how off‐orientation involving lattice planes not parallel to the surface influences properties of AlGaN and InGaN layers. The following issues are presented: (i) morphology of GaN and InGaN layers, (ii) unit cell deformation in AlGaN and InGaN layers, (iii) cracking of AlGaN layers, and (iv) In incorporation into InGaN layers. Finally, laterally patterned on‐axis c ‐plane GaN substrates were successfully used to construct violet laser diodes as well as first multicolour laser diode arrays. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
14
Strain relaxation in AlGaN under tensile plane stress
S. Einfeldt, V. Kirchner, H. Heinke et al. · Journal of Applied Physics · 2000 · 127 citations · Full text
Natural Sciences, Materials Engineering, Materials Science +17
Epitaxial tilting of GaN grown on vicinal surfaces of sapphire
Xianrong Huang, Jie Bai, Michael Dudley et al. · Applied Physics Letters · 2005 · 47 citations
Natural Sciences, Materials Engineering, Materials Science +17