R. Czernecki - Concepedia

Author

R. Czernecki

Institute of High Pressure Physics ORCID

Also Known As

Czernecki, Robert, F Ivaldi, Matteo Buffolo, R Czernecki, R. CZERNECKI, R. Czernecki, Robert Czernecki

182

Publications

1.8K

Citations

H-Index

Concepts

All Affiliations

Institute of High Pressure Physics TopGaN (Poland)Polish Academy of Sciences Institute of Physics Warsaw University of Technology

About

R. Czernecki is an author at Institute of High Pressure Physics specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	25	54	1.4K
2	Applied Physics	23	51	1.3K
3	Natural Sciences	2	2	39
4	Chemical Engineering	1	1	31
5	Chemistry	1	1	12

R. Czernecki

Publications

1.6K

Citations

H-Index

Page 1

	Year	Citations
Degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals P. Wiśniewski, P. Prystawko, I. Grzegory, Applied Physics Letters Wide-bandgap SemiconductorPoint DefectsEngineeringIngan Laser DiodesBulk Gan Crystals	2006	80
Optimization of InGaN–GaN MQW Photodetector Structures for High-Responsivity Performance J. Pereiro, C. Rivera, Á. Navarro Tobar, IEEE Journal of Quantum Electronics Wide-bandgap SemiconductorPhotonicsElectrical EngineeringLayer ThicknessEngineering	2009	57
Role of the electron blocking layer in the low-temperature collapse of electroluminescence in nitride light-emitting diodes Szymon Grzanka, G. Franssen, G. Targowski, Applied Physics Letters White OledElectrical EngineeringSolid-state LightingEngineeringPhotoluminescence	2007	53
Influence of GaN substrate off‐cut on properties of InGaN and AlGaN layers M. Sarzyński, M. Leszczyński, M. Kryśko, Crystal Research and Technology Materials EngineeringMaterials ScienceElectrical EngineeringWide-bandgap SemiconductorEngineering	2011	51
A deep acceptor defect responsible for the yellow luminescence in GaN and AlGaN P. Kamyczek, E. Płaczek‐Popko, Vl. Kolkovsky, Journal of Applied Physics Wide-bandgap SemiconductorOptical MaterialsEngineeringLuminescence PropertyOptical Properties	2012	50
Elimination of trench defects and V-pits from InGaN/GaN structures Julita Smalc‐Koziorowska, Ewa Grzanka, R. Czernecki, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering	2015	47
Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy M. Leszczyński, R. Czernecki, Stanisław Krukowski, Journal of Crystal Growth Materials ScienceMaterials EngineeringElectrical EngineeringInaln LayersEngineering	2010	43
Application of a composite plasmonic substrate for the suppression of an electromagnetic mode leakage in InGaN laser diodes P. Perlin, Katarzyna Holc, M. Sarzyński, Applied Physics Letters Wide-bandgap SemiconductorEngineeringLaser ApplicationsIngan Laser DiodesElectromagnetic Mode Leakage	2009	41
Correlation between luminescence and compositional striations in InGaN layers grown on miscut GaN substrates M. Kryśko, G. Franssen, T. Suski, Applied Physics Letters Wide-bandgap SemiconductorOptical MaterialsEngineeringMiscut AngleMiscut Gan Substrates	2007	40
Cavity suppression in nitride based superluminescent diodes Anna Kafar, Szymon Stańczyk, Szymon Grzanka, Journal of Applied Physics PhotonicsSuperluminescence BehaviorSolid-state LightingEngineeringPhotoluminescence	2012	38

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