R. Czernecki

Degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals

P. Wiśniewski, P. Prystawko, I. Grzegory et al. · Applied Physics Letters · 2006 · 80 citations

Wide-bandgap Semiconductor, Point Defects, Engineering +17

Optimization of InGaN–GaN MQW Photodetector Structures for High-Responsivity Performance

J. Pereiro, C. Rivera, Á. Navarro Tobar et al. · IEEE Journal of Quantum Electronics · 2009 · 57 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +13

Role of the electron blocking layer in the low-temperature collapse of electroluminescence in nitride light-emitting diodes

Szymon Grzanka, G. Franssen, G. Targowski et al. · Applied Physics Letters · 2007 · 53 citations

White Oled, Electrical Engineering, Solid-state Lighting +15

Influence of GaN substrate off‐cut on properties of InGaN and AlGaN layers

M. Sarzyński, M. Leszczyński, M. Kryśko et al. · Crystal Research and Technology · 2011 · 51 citations

Materials Engineering, Materials Science, Electrical Engineering +12

A deep acceptor defect responsible for the yellow luminescence in GaN and AlGaN

P. Kamyczek, E. Płaczek‐Popko, Vl. Kolkovsky et al. · Journal of Applied Physics · 2012 · 50 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +16