G. Targowski

Visible light communications using a directly modulated 422 nm GaN laser diode

Scott Watson, Mingming Tan, Stephen P. Najda et al. · Optics Letters · 2013 · 134 citations

Free-space Optical Network, Photonics, Solid-state Lighting +12

Role of the electron blocking layer in the low-temperature collapse of electroluminescence in nitride light-emitting diodes

Szymon Grzanka, G. Franssen, G. Targowski et al. · Applied Physics Letters · 2007 · 53 citations

White Oled, Electrical Engineering, Solid-state Lighting +15

Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy

M. Leszczyński, R. Czernecki, Stanisław Krukowski et al. · Journal of Crystal Growth · 2010 · 43 citations

Materials Science, Materials Engineering, Electrical Engineering +9

High-Optical-Power InGaN Superluminescent Diodes with “j-shape” Waveguide

Anna Kafar, Szymon Stańczyk, G. Targowski et al. · Applied Physics Express · 2013 · 40 citations

Photonics, Electrical Engineering, Solid-state Lighting +14

Graded-index separate confinement heterostructure InGaN laser diodes

Szymon Stańczyk, Tomasz Czyszanowski, Anna Kafar et al. · Applied Physics Letters · 2013 · 37 citations · Full text

Optical Materials, Engineering, Al Content +18