High-Optical-Power InGaN Superluminescent Diodes with “j-shape” Waveguide

Abstract

We demonstrate blue-violet InGaN superluminescent diodes (SLDs) with bent-waveguide (j-shape) geometry, emitting optical power exceeding 200 mW for SLD with 1-mm-long waveguide. The adopted j-shape geometry prevents devices from lasing, even at the highest applied currents (450 mA). However, high-resolution measurements reveal the appearance of spectral ripples at currents on the order of 250 mA. The maximum output power increases with the waveguide length.