100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam

Takao Oto, Ryan G. Banal, Ken Kataoka, +2

Nature Photonics

Aluminium NitridePhotonicsPhotoluminescenceEngineeringPhysics +7

Two-dimensional multicolor (RGBY) integrated nanocolumn micro-LEDs as a fundamental technology of micro-LED display

Katsumi Kishino, Naoki Sakakibara, Kazuki Narita, +1

Applied Physics Express

EngineeringElectroluminescence SpectraHigh-productivity MicroledMicro-led DisplayOptoelectronic Devices +25

High-Optical-Power InGaN Superluminescent Diodes with “j-shape” Waveguide

Anna Kafar, Szymon Stańczyk, G. Targowski, +5

Applied Physics Express

PhotonicsElectrical EngineeringSolid-state LightingEngineeringPhotoluminescence +12

Novel selective area growth (SAG) method for regularly arranged AlGaN nanocolumns using nanotemplates

Koji Yamano, Katsumi Kishino, Hiroto Sekiguchi, +3

Journal of Crystal Growth

Materials EngineeringMaterials ScienceAluminium NitrideEngineeringNanomaterials +5

Guanidium iodide treatment of size-controlled CsPbI3 quantum dots for stable crystal phase and highly efficient red LEDs

Hinako Ebe, Rikuo Suzuki, Shunsuke Sumikoshi, +8

Chemical Engineering Journal

EngineeringLuminescent GlassHalide PerovskitesChemistryLuminescence Property +17

Co-existence of a few and sub micron inhomogeneities in Al-rich AlGaN/AlN quantum wells

Yoshiya Iwata, Takao Oto, David Gachet, +3

Journal of Applied Physics

Aluminium NitrideWide-bandgap SemiconductorJ. ApplEngineeringSub Micron Inhomogeneities +14

Design and optimization of InGaN superluminescent diodes

Anna Kafar, Szymon Stańczyk, P. Wiśniewski, +5

physica status solidi (a)

Optical MaterialsEngineeringOptoelectronic DevicesHigh-power LasersEmission Spectra +14

Carrier-density dependence of photoluminescence from localized states in InGaN/GaN quantum wells in nanocolumns and a thin film

Naoki Shimosako, Yuta Inose, H. Satoh, +5

Journal of Applied Physics

Higher Pl EfficiencyCarrier-density DependencePl EfficiencyEngineeringPhysics +13

GaN nanocolumn arrays with diameter <30 nm prepared by two‐step selective area growth

Tatsuya Kano, Jun Yoshida, Rin Miyagawa, +3

Electronics Letters

Wide-bandgap SemiconductorCrystal NucleationEngineeringSemiconductor NanostructuresNc Density +14

Influence of GaN column diameter on structural properties for InGaN nanocolumns grown on top of GaN nanocolumns

Takao Oto, Yutaro Mizuno, Ai Yanagihara, +5

AIP Advances

Materials ScienceGan Column DiameterElectrical EngineeringStructural PropertiesEngineering +10