Growth of high quality Er–Ge films on Ge(001) substrates by suppressing oxygen contamination during germanidation annealing

N-Type Schottky Barrier Source/Drain MOSFET Using Ytterbium Silicide

S. Zhu, Kevin J. Chen, M.-F. Li et al. · IEEE Electron Device Letters · 2004 · 207 citations

Engineering, Electrical Engineering, Materials Science +17

Diffusion marker experiments with rare-earth silicides and germanides: Relative mobilities of the two atom species

J. E. E. Baglin, F. M. d’Heurle, C. S. Petersson · Journal of Applied Physics · 1981 · 139 citations

Natural Sciences, Chemistry, Materials Science +17

High mobility Ge-on-insulator p-channel MOSFETs using Pt germanide Schottky source/drain

Tatsuro Maeda, Keiji Ikeda, Shu Nakaharai et al. · IEEE Electron Device Letters · 2005 · 128 citations

Engineering, Electrical Engineering, Materials Science +14

A sub-400°C germanium MOSFET technology with high-κ dielectric and metal gate

Chi On Chui, Hyoungsub Kim, B. B. Triplett et al. · 2003 · 98 citations

Engineering, Electrical Engineering, Materials Science +17

Surface morphology of erbium silicide

S. S. Lau, C. S. Pai, Chia‐Chen Wu et al. · Applied Physics Letters · 1982 · 62 citations

Engineering, Electrical Engineering, Materials Science +17