W.D. Wang

Thermal stability of (HfO2)x(Al2O3)1−x on Si

H.Y. Yu, Nan Wu, M. F. Li et al. · Applied Physics Letters · 2002 · 92 citations

Materials Engineering, Materials Science, Pure Hfo2 +12

Physical and electrical characteristics of HfN gate electrode for advanced MOS devices

H.Y. Yu, H.F. Lim, J.H. Chen et al. · IEEE Electron Device Letters · 2003 · 77 citations

Materials Science, Electrical Characteristics, Electrical Engineering +14

Thermal stability of nitrogen incorporated in HfNxOy gate dielectrics prepared by reactive sputtering

Jinfeng Kang, H.Y. Yu, Chao Ren et al. · Applied Physics Letters · 2004 · 59 citations

Materials Science, Post Deposition Annealing, Electrical Engineering +13

Fermi-Level Pinning Induced Thermal Instability in the Effective Work Function of TaN in<tex>$hbox TaN/SiO_2$</tex>Gate Stack

C. Ren, H.Y. Yu, Jinfeng Kang et al. · IEEE Electron Device Letters · 2004 · 56 citations

Gate Stack, Electrical Engineering, Engineering +14

Effective enhancement of thermoelectric and mechanical properties of germanium telluride <i>via</i> rhenium-doping

Ady Suwardi, Su Hui Lim, Yun Zheng et al. · Journal of Materials Chemistry C · 2020 · 51 citations

Engineering, Thermoelectrics, Remarkable Enhancement +16